IRLU014PBF VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Mounting: THT
Kind of channel: enhancement
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Gate charge: 8.4nC
Kind of package: tube
auf Bestellung 2566 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 133+ | 0.54 EUR |
| 149+ | 0.48 EUR |
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Technische Details IRLU014PBF VISHAY
Description: MOSFET N-CH 60V 7.7A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Weitere Produktangebote IRLU014PBF nach Preis ab 0.48 EUR bis 0.83 EUR
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IRLU014PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Power dissipation: 25W Case: IPAK; TO251 Mounting: THT Kind of channel: enhancement On-state resistance: 0.28Ω Gate-source voltage: ±10V Gate charge: 8.4nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2566 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLU014PBF | Hersteller : Vishay Semiconductors |
MOSFETs RECOMMENDED ALT IRLU |
auf Bestellung 5879 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLU014PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
auf Bestellung 3424 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLU014PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7.7A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |
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IRLU014PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7.7A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |
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IRLU014PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7.7A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |