auf Bestellung 1162 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 162+ | 0.97 EUR |
| 181+ | 0.83 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLU110PBF Vishay
Description: MOSFET N-CH 100V 4.3A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Weitere Produktangebote IRLU110PBF nach Preis ab 0.39 EUR bis 3.46 EUR
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IRLU110PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK |
auf Bestellung 1162 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU110PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 964 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLU110PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
auf Bestellung 964 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU110PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
auf Bestellung 7151 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLU110PBF | Hersteller : Vishay Semiconductors |
MOSFET RECOMMENDED ALT IRLU110 |
auf Bestellung 2432 Stücke: Lieferzeit 14-28 Tag (e) |
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IRLU110PBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK |
auf Bestellung 1162 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU110PBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |