IRLU7843PBF International Rectifier
Hersteller: International RectifierDescription: MOSFET N-CH 30V 161A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.66 EUR |
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Technische Details IRLU7843PBF International Rectifier
Description: MOSFET N-CH 30V 161A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 161A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15.
Weitere Produktangebote IRLU7843PBF nach Preis ab 1.34 EUR bis 2.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRLU7843PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 161A IPAK Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLU7843PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 161A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 1060 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU7843PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 161A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 1050 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU7843PBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl |
auf Bestellung 3000 Stücke: Lieferzeit 94-98 Tag (e) |
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IRLU7843PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 161A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 1060 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU7843PBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRLU7843PBF - IRLU7843 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLU7843PBF | Hersteller : INFINEON TECHNOLOGIES |
IRLU7843PBF THT N channel transistors |
Produkt ist nicht verfügbar |
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IRLU7843PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 161A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: IPAK (TO-251AA) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 |
Produkt ist nicht verfügbar |