| Anzahl | Preis |
|---|---|
| 1+ | 5.56 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 1.99 EUR |
| 2000+ | 1.88 EUR |
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Technische Details IRLZ44PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 50A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.
Weitere Produktangebote IRLZ44PBF-BE3 nach Preis ab 2.75 EUR bis 6.02 EUR
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IRLZ44PBF-BE3 | Vishay Siliconix |
 Description: MOSFET N-CH 60V 50A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
auf Bestellung 413 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRLZ44PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 413 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.02 EUR |
| 50+ | 3.04 EUR |
| 100+ | 2.75 EUR |