Technische Details IRLZ44ZSPBF Infineon / IR
Description: MOSFET N-CH 55V 51A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V.
Weitere Produktangebote IRLZ44ZSPBF
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IRLZ44ZSPBF Produktcode: 4350 |
Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: D2Pak (TO-263-3) Uds,V: 55 V Idd,A: 51 A Rds(on), Ohm: 13,5 mOhm Ciss, pF/Qg, nC: 1620/24 Bem.: Керування логічним рівнем JHGF: SMD |
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IRLZ44ZSPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 51A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V |
Produkt ist nicht verfügbar |