Technische Details IRS2118PBF Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP, Part Status: Last Time Buy, Current - Peak Output (Source, Sink): 290mA, 600mA, Logic Voltage - VIL, VIH: 6V, 9.5V, Gate Type: IGBT, MOSFET (N-Channel), Number of Drivers: 1, Driven Configuration: High-Side, Channel Type: Single, Rise / Fall Time (Typ): 75ns, 35ns, Supplier Device Package: 8-PDIP, High Side Voltage - Max (Bootstrap): 600 V, Input Type: Inverting, Voltage - Supply: 10V ~ 20V, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: 8-DIP (0.300", 7.62mm), Packaging: Tube, DigiKey Programmable: Not Verified.
Weitere Produktangebote IRS2118PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRS2118PBF | Infineon Technologies |
 Description: IC GATE DRVR HIGH-SIDE 8DIPPart Status: Last Time Buy Current - Peak Output (Source, Sink): 290mA, 600mA Logic Voltage - VIL, VIH: 6V, 9.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 75ns, 35ns Supplier Device Package: 8-PDIP High Side Voltage - Max (Bootstrap): 600 V Input Type: Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube DigiKey Programmable: Not Verified |
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Im Einkaufswagen Stück im Wert von UAH |
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IRS2118PBF | Infineon Technologies |
Gate Drivers Sngl Hi Sd Drvr Invrt Inpt |
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IRS2118PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns Power: 1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRS2118PBF |
|
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8DIP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2118PBF |
|
Hersteller: Infineon Technologies
Gate Drivers Sngl Hi Sd Drvr Invrt Inpt
Gate Drivers Sngl Hi Sd Drvr Invrt Inpt
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2118PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Power: 1W
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Power: 1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH