IRS21271SPBF Infineon Technologies
auf Bestellung 3800 Stücke:
Lieferzeit 283-287 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 2.66 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.52 EUR |
| 2500+ | 1.37 EUR |
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Technische Details IRS21271SPBF Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 9V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 80ns, 40ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Last Time Buy, DigiKey Programmable: Not Verified.
Weitere Produktangebote IRS21271SPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRS21271SPBF Produktcode: 165200
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IRS21271SPBF | Hersteller : Infineon Technologies |
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IRS21271SPBF | Hersteller : Infineon Technologies |
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IRS21271SPBF | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |