Technische Details IS42S16320F-6BL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 512Mb DRAM, Memory organisation: 8Mx16bitx4, Clock frequency: 167MHz, Access time: 6ns, Case: TWBGA54, Mounting: SMD, Operating temperature: 0...70°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 3...3.6V DC, Anzahl je Verpackung: 240 Stücke.
Weitere Produktangebote IS42S16320F-6BL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IS42S16320F-6BL | Hersteller : ISSI |
 DRAM Chip SDRAM 512Mbit 32Mx16 3.3V 54-Pin TW-BGA |
Produkt ist nicht verfügbar |
|
| IS42S16320F-6BL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TWBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
||
 |
IS42S16320F-6BL | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512MBIT PAR 54TFBGA Packaging: Tray Package / Case: 54-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 54-TW-BGA (8x13) Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|
 |
IS42S16320F-6BL | Hersteller : ISSI |
DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 ball BGA (8mmx13mm), RoHS |
Produkt ist nicht verfügbar |
|
| IS42S16320F-6BL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TWBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |