Technische Details IS42S32800J-75EBLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90, Operating temperature: -40...85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 2Mx32bitx4, Access time: 7.5ns, Clock frequency: 133MHz, Supply voltage: 3...3.6V DC, Kind of package: in-tray; tube, Case: TFBGA90, Mounting: SMD, Kind of interface: parallel, Memory: 256Mb DRAM, Anzahl je Verpackung: 240 Stücke.
Weitere Produktangebote IS42S32800J-75EBLI
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IS42S32800J-75EBLI | Hersteller : ISSI |
 DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA |
Produkt ist nicht verfügbar |
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| IS42S32800J-75EBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bitx4 Access time: 7.5ns Clock frequency: 133MHz Supply voltage: 3...3.6V DC Kind of package: in-tray; tube Case: TFBGA90 Mounting: SMD Kind of interface: parallel Memory: 256Mb DRAM Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
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IS42S32800J-75EBLI | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 90TFBGA Packaging: Tray Package / Case: 90-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 90-TFBGA (8x13) Memory Interface: Parallel Access Time: 6 ns Memory Organization: 8M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS42S32800J-75EBLI | Hersteller : ISSI |
DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz a. CL2, 90 ball BGA (8mmx13mm) RoHS, IT |
Produkt ist nicht verfügbar |
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| IS42S32800J-75EBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bitx4 Access time: 7.5ns Clock frequency: 133MHz Supply voltage: 3...3.6V DC Kind of package: in-tray; tube Case: TFBGA90 Mounting: SMD Kind of interface: parallel Memory: 256Mb DRAM |
Produkt ist nicht verfügbar |