IS42S32800J-75ETL ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 86TSOP II
Packaging: Tube
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 86-TSOP II
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 8M x 32
DigiKey Programmable: Not Verified
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Technische Details IS42S32800J-75ETL ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 86TSOP II, Packaging: Tube, Package / Case: 86-TFSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 133 MHz, Memory Format: DRAM, Supplier Device Package: 86-TSOP II, Memory Interface: Parallel, Access Time: 6 ns, Memory Organization: 8M x 32, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS42S32800J-75ETL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IS42S32800J-75ETL | ISSI |
DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz a. CL2, 86 pin TSOP II RoHS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS42S32800J-75ETL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TSOP86 II Operating temperature: 0...70°C Mounting: SMD Supply voltage: 3...3.6V DC Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 2Mx32bitx4 Kind of package: in-tray; tube Case: TSOP86 II Kind of memory: SDRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 108 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS42S32800J-75ETL |
|
Hersteller: ISSI
DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz a. CL2, 86 pin TSOP II RoHS
DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz a. CL2, 86 pin TSOP II RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42S32800J-75ETL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TSOP86 II
Operating temperature: 0...70°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 2Mx32bitx4
Kind of package: in-tray; tube
Case: TSOP86 II
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TSOP86 II
Operating temperature: 0...70°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 2Mx32bitx4
Kind of package: in-tray; tube
Case: TSOP86 II
Kind of memory: SDRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 108 Stücke
Im Einkaufswagen
Stück im Wert von UAH