%20Renders/706;54TFBGA-1.2-8x8;;54.jpg "IS42SM32100D-6BLI")
Technische Details IS42SM32100D-6BLI ISSI, Integrated Silicon Solution Inc
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 32Mb DRAM, Memory organisation: 512kx32bitx2, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA90, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 2.7...3.6V DC.
Weitere Produktangebote IS42SM32100D-6BLI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IS42SM32100D-6BLI | ISSI |
 DRAM 32M, 3.3V, Mobile SDRAM, 1Mx32, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IS42SM32100D-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 32Mb DRAM Memory organisation: 512kx32bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS42SM32100D-6BLI |
|
Hersteller: ISSI
DRAM 32M, 3.3V, Mobile SDRAM, 1Mx32, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
DRAM 32M, 3.3V, Mobile SDRAM, 1Mx32, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42SM32100D-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 32Mb DRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 32Mb DRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH