IS42SM32200M-6BLI-TR ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 64MBIT PARALLEL 90TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SDRAM - Mobile
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-TFBGA (8x13)
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 2M x 32
DigiKey Programmable: Not Verified
Produktrezensionen
Produktbewertung abgeben
Technische Details IS42SM32200M-6BLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 64MBIT PARALLEL 90TFBGA, Packaging: Tape & Reel (TR), Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SDRAM - Mobile, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 90-TFBGA (8x13), Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 2M x 32, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS42SM32200M-6BLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IS42SM32200M-6BLI-TR | ISSI |
DRAM 64M, 33V, Mobile SDRAM, 2Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IS42SM32200M-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS42SM32200M-6BLI-TR |
![]() |
Hersteller: ISSI
DRAM 64M, 33V, Mobile SDRAM, 2Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
DRAM 64M, 33V, Mobile SDRAM, 2Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS42SM32200M-6BLI-TR |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH

