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IS42SM32400H-75BLI-TR

IS42SM32400H-75BLI-TR ISSI


526302839773396542-45sm-rm-vm32400h.pdf Hersteller: ISSI
DRAM Chip Mobile SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA T/R
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Technische Details IS42SM32400H-75BLI-TR ISSI

Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90, Memory: 128Mb DRAM, Supply voltage: 2.7...3.6V DC, Clock frequency: 133MHz, Kind of interface: parallel, Memory organisation: 1Mx32bitx4, Kind of package: reel; tape, Case: TFBGA90, Kind of memory: SDRAM, Mounting: SMD, Access time: 7.5ns, Type of integrated circuit: DRAM memory, Operating temperature: -40...85°C, Anzahl je Verpackung: 2500 Stücke.

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IS42SM32400H-75BLI-TR Hersteller : ISSI IS42RM32400H-6BLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Anzahl je Verpackung: 2500 Stücke
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IS42SM32400H-75BLI-TR IS42SM32400H-75BLI-TR Hersteller : ISSI, Integrated Silicon Solution Inc 42-45SM-RM-VM32400H.pdf Description: IC DRAM 128MBIT PAR 90TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SDRAM - Mobile
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 90-TFBGA (8x13)
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 4M x 32
DigiKey Programmable: Not Verified
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IS42SM32400H-75BLI-TR IS42SM32400H-75BLI-TR Hersteller : ISSI 42-45SM-RM-VM32400H-837955.pdf DRAM 128M, 3.3V, Mobile SDRAM, 4Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
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IS42SM32400H-75BLI-TR Hersteller : ISSI IS42RM32400H-6BLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar