Technische Details IS43DR16320E-25DBLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84, Type of integrated circuit: DRAM memory, Mounting: SMD, Case: TWBGA84, Operating temperature: -40...85°C, Kind of package: reel; tape, Kind of memory: DDR2; SDRAM, Supply voltage: 1.7...1.9V DC, Access time: 12.5ns, Clock frequency: 400MHz, Memory: 512Mb DRAM, Kind of interface: parallel, Memory organisation: 8Mx16bitx4, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote IS43DR16320E-25DBLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IS43DR16320E-25DBLI-TR | Hersteller : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Mounting: SMD Case: TWBGA84 Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: DDR2; SDRAM Supply voltage: 1.7...1.9V DC Access time: 12.5ns Clock frequency: 400MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| IS43DR16320E-25DBLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512M PARALLEL 84TWBGA |
Produkt ist nicht verfügbar |
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IS43DR16320E-25DBLI-TR | Hersteller : ISSI |
DRAM 512M, 1.8V, DDR2, 32Mx16, 400Mhz a. CL5, 84 ball BGA (8mmx12.5mm) RoHS, IT, T&R |
Produkt ist nicht verfügbar |
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| IS43DR16320E-25DBLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Mounting: SMD Case: TWBGA84 Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: DDR2; SDRAM Supply voltage: 1.7...1.9V DC Access time: 12.5ns Clock frequency: 400MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 |
Produkt ist nicht verfügbar |