IS43DR81280C-25DBLI

IS43DR81280C-25DBLI ISSI, Integrated Silicon Solution Inc


43-46DR81280C-16640C.pdf Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 60TWBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 60-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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Technische Details IS43DR81280C-25DBLI ISSI, Integrated Silicon Solution Inc

Description: IC DRAM 1GBIT PARALLEL 60TWBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 400 MHz, Memory Format: DRAM, Supplier Device Package: 60-TWBGA (8x10.5), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 400 ps, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified.

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IS43DR81280C-25DBLI Hersteller : ISSI IS43DR16640C-25DBL.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: DDR2; SDRAM
Supply voltage: 1.7...1.9V DC
Access time: 12.5ns
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx8bitx8
Anzahl je Verpackung: 242 Stücke
Produkt ist nicht verfügbar
IS43DR81280C-25DBLI IS43DR81280C-25DBLI Hersteller : ISSI 43-46DR81280C-16640C-845119.pdf DRAM DDR2,1G,1.8V, RoHs 400MHz,128Mx8, IT
Produkt ist nicht verfügbar
IS43DR81280C-25DBLI Hersteller : ISSI IS43DR16640C-25DBL.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: DDR2; SDRAM
Supply voltage: 1.7...1.9V DC
Access time: 12.5ns
Clock frequency: 400MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx8bitx8
Produkt ist nicht verfügbar