
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
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1+ | 15.22 EUR |
10+ | 14.01 EUR |
25+ | 12.27 EUR |
242+ | 11.88 EUR |
484+ | 11.30 EUR |
968+ | 10.89 EUR |
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Technische Details IS43DR82560C-25DBL ISSI
Description: IC DRAM 2GBIT PARALLEL 60TWBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 85°C (TC), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 400 MHz, Memory Format: DRAM, Supplier Device Package: 60-TWBGA (8x10.5), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 400 ps, Memory Organization: 256M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43DR82560C-25DBL
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS43DR82560C-25DBL | Hersteller : ISSI |
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Produkt ist nicht verfügbar |
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IS43DR82560C-25DBL | Hersteller : ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C Case: TWBGA60 Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx8bitx8 Access time: 5ns Clock frequency: 400MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: 0...85°C Supply voltage: 1.7...1.9V DC Anzahl je Verpackung: 242 Stücke |
Produkt ist nicht verfügbar |
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IS43DR82560C-25DBL | Hersteller : ISSI, Integrated Silicon Solution Inc |
![]() Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 400 MHz Memory Format: DRAM Supplier Device Package: 60-TWBGA (8x10.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 400 ps Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS43DR82560C-25DBL | Hersteller : ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C Case: TWBGA60 Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx8bitx8 Access time: 5ns Clock frequency: 400MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: 0...85°C Supply voltage: 1.7...1.9V DC |
Produkt ist nicht verfügbar |