Technische Details IS43DR86400E-3DBLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60, Operating temperature: -40...85°C, Kind of package: reel; tape, Kind of interface: parallel, Mounting: SMD, Case: TWBGA60, Access time: 15ns, Supply voltage: 1.7...1.9V DC, Clock frequency: 333MHz, Memory organisation: 16Mx8bitx4, Memory: 512Mb DRAM, Kind of memory: DDR2; SDRAM, Type of integrated circuit: DRAM memory.
Weitere Produktangebote IS43DR86400E-3DBLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IS43DR86400E-3DBLI-TR | Hersteller : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
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