IS43DR86400E-3DBLI-TR ISSI
Hersteller: ISSICategory: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Anzahl je Verpackung: 2000 Stücke
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Technische Details IS43DR86400E-3DBLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60, Operating temperature: -40...85°C, Kind of memory: DDR2; SDRAM, Memory organisation: 16Mx8bitx4, Access time: 15ns, Clock frequency: 333MHz, Kind of package: reel; tape, Kind of interface: parallel, Memory: 512Mb DRAM, Mounting: SMD, Case: TWBGA60, Supply voltage: 1.7...1.9V DC, Type of integrated circuit: DRAM memory, Anzahl je Verpackung: 2000 Stücke.
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IS43DR86400E-3DBLI-TR | Hersteller : ISSI |
DRAM 512M 64Mx8 333MHz DDR2 1.8V |
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| IS43DR86400E-3DBLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 15ns Clock frequency: 333MHz Kind of package: reel; tape Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |