IS43LR16400C-6BLI ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 64MBIT PARALLEL 60TFBGA
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 60-TFBGA (8x10)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 16
Access Time: 5.5 ns
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Technische Details IS43LR16400C-6BLI ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 64MBIT PARALLEL 60TFBGA, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 60-TFBGA (8x10), Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM - Mobile LPDDR, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 64Mbit, Mounting Type: Surface Mount, Package / Case: 60-TFBGA, Packaging: Tray, DigiKey Programmable: Not Verified, Memory Organization: 4M x 16, Access Time: 5.5 ns.
Weitere Produktangebote IS43LR16400C-6BLI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IS43LR16400C-6BLI | ISSI |
DRAM 64M, 1.8V, M-DDR 4Mx16, 166Mhz, RoHS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IS43LR16400C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43LR16400C-6BLI |
|
Hersteller: ISSI
DRAM 64M, 1.8V, M-DDR 4Mx16, 166Mhz, RoHS
DRAM 64M, 1.8V, M-DDR 4Mx16, 166Mhz, RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43LR16400C-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH