%20Renders/706;-60TWBGA-1.1-10x8;-;-60.jpg "IS43LR16640A-5BL")
Technische Details IS43LR16640A-5BL ISSI, Integrated Silicon Solution Inc
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C, Type of integrated circuit: DRAM memory, Kind of memory: LPDDR; SDRAM, Memory: 1Gb DRAM, Memory organisation: 16Mx16bitx4, Clock frequency: 200MHz, Case: TWBGA60, Mounting: SMD, Operating temperature: 0...70°C, Supply voltage: 1.7...1.95V DC, Access time: 5ns, Kind of interface: parallel, Kind of package: in-tray; tube.
Weitere Produktangebote IS43LR16640A-5BL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IS43LR16640A-5BL | ISSI |
 DRAM 1G, 18V, Mobile DDR, 64Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43LR16640A-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 5ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43LR16640A-5BL |
|
Hersteller: ISSI
DRAM 1G, 18V, Mobile DDR, 64Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS
DRAM 1G, 18V, Mobile DDR, 64Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43LR16640A-5BL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 5ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 5ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH