Technische Details IS43LR16800G-6BL-TR ISSI
Description: IC DRAM 128MBIT PAR 60TFBGA, Packaging: Tape & Reel (TR), Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x10), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 8M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43LR16800G-6BL-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IS43LR16800G-6BL-TR | Hersteller : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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IS43LR16800G-6BL-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 128MBIT PAR 60TFBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| IS43LR16800G-6BL-TR | Hersteller : ISSI |
DRAM 128M, 1.8V, Mobile DDR, 8Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS, T&R |
Produkt ist nicht verfügbar |
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| IS43LR16800G-6BL-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel |
Produkt ist nicht verfügbar |