IS43LR32800G-6BL ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 90TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 32
Access Time: 5.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 90-TFBGA (8x13)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Packaging: Tray
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Technische Details IS43LR32800G-6BL ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 90TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 8M x 32, Access Time: 5.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 90-TFBGA (8x13), Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM - Mobile LPDDR, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 256Mbit, Mounting Type: Surface Mount, Package / Case: 90-TFBGA, Packaging: Tray.
Weitere Produktangebote IS43LR32800G-6BL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IS43LR32800G-6BL | ISSI |
DRAM 256M, 18V, Mobile DDR, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43LR32800G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43LR32800G-6BL |
|
Hersteller: ISSI
DRAM 256M, 18V, Mobile DDR, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS
DRAM 256M, 18V, Mobile DDR, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43LR32800G-6BL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH