IS43R16160F-5BL ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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Technische Details IS43R16160F-5BL ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x13), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43R16160F-5BL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IS43R16160F-5BL | ISSI |
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS43R16160F-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 190 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43R16160F-5BL |
![]() |
Hersteller: ISSI
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43R16160F-5BL |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 190 Stücke
Im Einkaufswagen
Stück im Wert von UAH

