IS43R16320F-6BLI-TR ISSI, Integrated Silicon Solution Inc
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Technische Details IS43R16320F-6BLI-TR ISSI, Integrated Silicon Solution Inc
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60, Kind of package: reel; tape, Kind of interface: parallel, Mounting: SMD, Case: TWBGA60, Operating temperature: -40...85°C, Access time: 6ns, Supply voltage: 2.5V DC, Memory: 512Mb DRAM, Clock frequency: 166MHz, Memory organisation: 8Mx16bitx4, Kind of memory: DDR1; SDRAM, Type of integrated circuit: DRAM memory.
Weitere Produktangebote IS43R16320F-6BLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IS43R16320F-6BLI-TR | ISSI |
 DRAM 512M, 2.5V, DDR 32Mx16, 166MHz, 60 ball BGA (8mmx13mm) RoHS, IT, T&R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43R16320F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43R16320F-6BLI-TR |
|
Hersteller: ISSI
DRAM 512M, 2.5V, DDR 32Mx16, 166MHz, 60 ball BGA (8mmx13mm) RoHS, IT, T&R
DRAM 512M, 2.5V, DDR 32Mx16, 166MHz, 60 ball BGA (8mmx13mm) RoHS, IT, T&R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43R16320F-6BLI-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH