auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.39 EUR |
| 10+ | 5.97 EUR |
| 25+ | 5.68 EUR |
| 216+ | 5.26 EUR |
| 540+ | 5.07 EUR |
| 1080+ | 4.96 EUR |
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Technische Details IS43R86400F-5TL ISSI
Description: IC DRAM 512MBIT PAR 66TSOP II, Packaging: Tray, Package / Case: 66-TSSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 66-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 64M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43R86400F-5TL nach Preis ab 6.21 EUR bis 7.85 EUR
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IS43R86400F-5TL | Hersteller : ISSI, Integrated Silicon Solution Inc |
 Description: IC DRAM 512MBIT PAR 66TSOP IIPackaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) |
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| IS43R86400F-5TL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Anzahl je Verpackung: 108 Stücke |
Produkt ist nicht verfügbar |
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| IS43R86400F-5TL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |