IS43R86400F-5TL ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 66TSOP II
Memory Format: DRAM
Clock Frequency: 200 MHz
Technology: SDRAM - DDR
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Packaging: Tray
Memory Organization: 64M x 8
Access Time: 700 ps
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Active
Supplier Device Package: 66-TSOP II
DigiKey Programmable: Not Verified
| Anzahl | Preis |
|---|---|
| 3+ | 7.85 EUR |
| 10+ | 7.11 EUR |
| 25+ | 6.96 EUR |
| 40+ | 6.92 EUR |
| 108+ | 6.21 EUR |
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Technische Details IS43R86400F-5TL ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 66TSOP II, Memory Format: DRAM, Clock Frequency: 200 MHz, Technology: SDRAM - DDR, Voltage - Supply: 2.3V ~ 2.7V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 66-TSSOP (0.400", 10.16mm Width), Packaging: Tray, Memory Organization: 64M x 8, Access Time: 700 ps, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Part Status: Active, Supplier Device Package: 66-TSOP II, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43R86400F-5TL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IS43R86400F-5TL | ISSI |
DRAM 512M 64Mx8 200MHz DDR 2.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS43R86400F-5TL |
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Hersteller: ISSI
DRAM 512M 64Mx8 200MHz DDR 2.5V
DRAM 512M 64Mx8 200MHz DDR 2.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

