IS43TR16256B-107MBLI ISSI
Hersteller: ISSI
DRAM 4G, 1.5V, DDR3, 256Mx16, 1866MT/s @ 13-13-13, 96 ball BGA (9mm x13mm) RoHS, IT
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.64 EUR |
| 10+ | 17.33 EUR |
| 25+ | 16.8 EUR |
| 50+ | 16.4 EUR |
| 190+ | 15.23 EUR |
| 570+ | 14.99 EUR |
| 1140+ | 14.6 EUR |
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Technische Details IS43TR16256B-107MBLI ISSI
Description: IC DRAM 4GBIT PAR 96TWBGA, DigiKey Programmable: Not Verified, Memory Organization: 256M x 16, Access Time: 20 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 96-TWBGA (9x13), Memory Format: DRAM, Clock Frequency: 933 MHz, Technology: SDRAM - DDR3, Voltage - Supply: 1.425V ~ 1.575V, Operating Temperature: -40°C ~ 95°C (TC), Memory Type: Volatile, Memory Size: 4Gbit, Mounting Type: Surface Mount, Package / Case: 96-TFBGA, Packaging: Tray.
Weitere Produktangebote IS43TR16256B-107MBLI nach Preis ab 19.47 EUR bis 23.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IS43TR16256B-107MBLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PAR 96TWBGA DigiKey Programmable: Not Verified Memory Organization: 256M x 16 Access Time: 20 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Supplier Device Package: 96-TWBGA (9x13) Memory Format: DRAM Clock Frequency: 933 MHz Technology: SDRAM - DDR3 Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 96-TFBGA Packaging: Tray |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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| IS43TR16256B-107MBLI | ISSI |
Динамічна енергозалежна пам'ять SDRAM DDR3, Uживл, В = 1,425...1,575, Об'єм RAM = 4 Гбіт, Орг. пам. = 256М х 16, Тдост/Частота = 20 нс, Тексп, °C = -40...+95, Тип інтерф. = Паралельний, F = 933 МГц,... Інтегральні мікросхеми Корпус: TWBGA-96 Од. вим: шт Anzahl je Verpackung: 190 Stücke |
verfügbar 1 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| IS43TR16256B-107MBLI |
|
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 4GBIT PAR 96TWBGA
DigiKey Programmable: Not Verified
Memory Organization: 256M x 16
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 96-TWBGA (9x13)
Memory Format: DRAM
Clock Frequency: 933 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Packaging: Tray
Description: IC DRAM 4GBIT PAR 96TWBGA
DigiKey Programmable: Not Verified
Memory Organization: 256M x 16
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 96-TWBGA (9x13)
Memory Format: DRAM
Clock Frequency: 933 MHz
Technology: SDRAM - DDR3
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Packaging: Tray
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.56 EUR |
| 10+ | 20.92 EUR |
| 25+ | 19.96 EUR |
| 40+ | 19.47 EUR |
| IS43TR16256B-107MBLI |
|
Hersteller: ISSI
Динамічна енергозалежна пам'ять SDRAM DDR3, Uживл, В = 1,425...1,575, Об'єм RAM = 4 Гбіт, Орг. пам. = 256М х 16, Тдост/Частота = 20 нс, Тексп, °C = -40...+95, Тип інтерф. = Паралельний, F = 933 МГц,... Інтегральні мікросхеми Корпус: TWBGA-96 Од. вим: шт
Anzahl je Verpackung: 190 Stücke
Динамічна енергозалежна пам'ять SDRAM DDR3, Uживл, В = 1,425...1,575, Об'єм RAM = 4 Гбіт, Орг. пам. = 256М х 16, Тдост/Частота = 20 нс, Тексп, °C = -40...+95, Тип інтерф. = Паралельний, F = 933 МГц,... Інтегральні мікросхеми Корпус: TWBGA-96 Од. вим: шт
Anzahl je Verpackung: 190 Stücke
verfügbar 1 Stücke: