IS43TR16256B-107MBLI ISSI
Hersteller: ISSIDRAM 4G, 1.5V, DDR3, 256Mx16, 1866MT/s @ 13-13-13, 96 ball BGA (9mm x13mm) RoHS, IT
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.66 EUR |
| 10+ | 14.56 EUR |
| 25+ | 14.12 EUR |
| 50+ | 13.78 EUR |
| 190+ | 12.8 EUR |
| 570+ | 12.6 EUR |
| 1140+ | 12.27 EUR |
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Technische Details IS43TR16256B-107MBLI ISSI
Description: IC DRAM 4GBIT PAR 96TWBGA, Packaging: Tray, Package / Case: 96-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.425V ~ 1.575V, Technology: SDRAM - DDR3, Clock Frequency: 933 MHz, Memory Format: DRAM, Supplier Device Package: 96-TWBGA (9x13), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 256M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43TR16256B-107MBLI nach Preis ab 16.36 EUR bis 19.8 EUR
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IS43TR16256B-107MBLI | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PAR 96TWBGA Packaging: Tray Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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| IS43TR16256B-107MBLI | Hersteller : ISSI |
Динамічна енергозалежна пам'ять SDRAM DDR3; Uживл, В = 1,425...1,575; Об'єм RAM = 4 Гбіт; Орг. пам. = 256М х 16; Тдост/Частота = 20 нс; Тексп, °C = -40...+95; Тип інтерф. = Паралельний; F = 933 МГц; TWBGA-96 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IS43TR16256B-107MBLI | Hersteller : ISSI |
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin TW-BGA |
Produkt ist nicht verfügbar |
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| IS43TR16256B-107MBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: -40...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.91ns |
Produkt ist nicht verfügbar |