IS43TR85120B-125KBLI ISSI
Hersteller: ISSI
DRAM 4G, 1.5V, DDR3, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.4 EUR |
| 10+ | 18.91 EUR |
| 25+ | 18.3 EUR |
| 50+ | 17.85 EUR |
| 100+ | 17.15 EUR |
| 242+ | 16.61 EUR |
| 484+ | 16.28 EUR |
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Technische Details IS43TR85120B-125KBLI ISSI
Description: 4G, 1.5V, DDR3, 512Mx8, 1600MT/s, Packaging: Bulk, Package / Case: 78-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.425V ~ 1.575V, Technology: SDRAM - DDR3, Clock Frequency: 800 MHz, Memory Format: DRAM, Supplier Device Package: 78-TWBGA (8x10.5), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 512M x 8.
Weitere Produktangebote IS43TR85120B-125KBLI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IS43TR85120B-125KBLI | ISSI, Integrated Silicon Solution Inc |
Description: 4G, 1.5V, DDR3, 512Mx8, 1600MT/s Packaging: Bulk Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.425V ~ 1.575V Technology: SDRAM - DDR3 Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 242 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS43TR85120B-125KBLI |
|
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: 4G, 1.5V, DDR3, 512Mx8, 1600MT/s
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Description: 4G, 1.5V, DDR3, 512Mx8, 1600MT/s
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 242 Stücke
Im Einkaufswagen
Stück im Wert von UAH