IS45S16160J-6TLA1 -TR ISSI
Hersteller: ISSICategory: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Anzahl je Verpackung: 1500 Stücke
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Technische Details IS45S16160J-6TLA1 -TR ISSI
Description: IC DRAM 256MBIT PAR 54TSOP II, Packaging: Tape & Reel (TR), Package / Case: 54-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 54-TSOP II, Memory Interface: Parallel, Access Time: 5.4 ns, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS45S16160J-6TLA1 -TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IS45S16160J-6TLA1 -TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 54TSOP II Packaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS45S16160J-6TLA1 -TR | Hersteller : ISSI |
DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II RoHS, T&R |
Produkt ist nicht verfügbar |
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| IS45S16160J-6TLA1 -TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |