IS46LR16320C-6BLA2 ISSI, Integrated Silicon Solution Inc
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Technische Details IS46LR16320C-6BLA2 ISSI, Integrated Silicon Solution Inc
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60, Kind of memory: SDRAM, Mounting: SMD, Supply voltage: 1.7...1.95V DC, Access time: 6ns, Type of integrated circuit: DRAM memory, Operating temperature: -40...105°C, Clock frequency: 166MHz, Memory: 512Mb DRAM, Kind of interface: parallel, Memory organisation: 8Mx16bitx4, Kind of package: in-tray; tube, Case: TFBGA60.
Weitere Produktangebote IS46LR16320C-6BLA2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IS46LR16320C-6BLA2 | ISSI |
 DRAM Automotive (-40 to +105C), 512M, 1.8V, Mobile DDR, 32Mx16, 60 ball BGA (8mmx10mm) RoHS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS46LR16320C-6BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...105°C Clock frequency: 166MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA60 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS46LR16320C-6BLA2 |
|
Hersteller: ISSI
DRAM Automotive (-40 to +105C), 512M, 1.8V, Mobile DDR, 32Mx16, 60 ball BGA (8mmx10mm) RoHS
DRAM Automotive (-40 to +105C), 512M, 1.8V, Mobile DDR, 32Mx16, 60 ball BGA (8mmx10mm) RoHS
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS46LR16320C-6BLA2 |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA60
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA60
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH