IS46TR16128CL-125KBLA2 ISSI
Hersteller: ISSIDRAM Automotive (Tc: -40 to +105C), 2G, 1.35V, DDR3, 128Mx16, 1600MT/s @ 11-11-11, 96 ball BGA (9mm x13mm) RoHS
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.5 EUR |
| 10+ | 13.38 EUR |
| 25+ | 13.08 EUR |
| 50+ | 13.04 EUR |
| 100+ | 11.11 EUR |
| 190+ | 11.09 EUR |
| 570+ | 10.91 EUR |
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Technische Details IS46TR16128CL-125KBLA2 ISSI
Description: IC DRAM 2GBIT PARALLEL 96TWBGA, Packaging: Tray, Package / Case: 96-TFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.283V ~ 1.45V, Technology: SDRAM - DDR3L, Clock Frequency: 800 MHz, Memory Format: DRAM, Supplier Device Package: 96-TWBGA (9x13), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 128M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS46TR16128CL-125KBLA2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IS46TR16128CL-125KBLA2 | Hersteller : ISSI |
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin TW-BGA |
Produkt ist nicht verfügbar |
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IS46TR16128CL-125KBLA2 | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 96TWBGA Packaging: Tray Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| IS46TR16128CL-125KBLA2 | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...105°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
Produkt ist nicht verfügbar |