IS61LF51236B-7.5TQLI ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT PARALLEL 100LQFP
Memory Organization: 512K x 36
Access Time: 7.5 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-LQFP (14x20)
Memory Format: SRAM
Clock Frequency: 117 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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Technische Details IS61LF51236B-7.5TQLI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT PARALLEL 100LQFP, Memory Organization: 512K x 36, Access Time: 7.5 ns, Memory Interface: Parallel, Part Status: Active, Supplier Device Package: 100-LQFP (14x20), Memory Format: SRAM, Clock Frequency: 117 MHz, Technology: SRAM - Synchronous, SDR, Voltage - Supply: 3.135V ~ 3.465V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 18Mbit, Mounting Type: Surface Mount, Package / Case: 100-LQFP, Packaging: Tray, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61LF51236B-7.5TQLI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IS61LF51236B-7.5TQLI | ISSI |
SRAM 18Mb,Flow-Through,Sync,512K x 36,7.5ns,3.3v or 2.5V I/O, 100Pin TQFP, RoHS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS61LF51236B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 72 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS61LF51236B-7.5TQLI |
![]() |
Hersteller: ISSI
SRAM 18Mb,Flow-Through,Sync,512K x 36,7.5ns,3.3v or 2.5V I/O, 100Pin TQFP, RoHS
SRAM 18Mb,Flow-Through,Sync,512K x 36,7.5ns,3.3v or 2.5V I/O, 100Pin TQFP, RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS61LF51236B-7.5TQLI |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen
Stück im Wert von UAH

