%20Renders/706;-100LQFP-1.6-14x20;-;-100.jpg "IS61LPS12836EC-200TQLI")
IS61LPS12836EC-200TQLI ISSI, Integrated Silicon Solution Inc
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Technische Details IS61LPS12836EC-200TQLI ISSI, Integrated Silicon Solution Inc
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100, Mounting: SMD, Operating temperature: -40...85°C, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Kind of interface: parallel, Case: QFP100, Access time: 3.1ns, Operating voltage: 3.3V, Memory: 4.5Mb SRAM, Memory organisation: 128kx36bit, Kind of package: in-tray; tube.
Weitere Produktangebote IS61LPS12836EC-200TQLI
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IS61LPS12836EC-200TQLI | Hersteller : ISSI |
 SRAM 4Mb, 3.3v, 200Mhz 128K x 36 Sync SRAM |
Produkt ist nicht verfügbar |
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| IS61LPS12836EC-200TQLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |