IS61LPS51218A-200TQLI ISSI
| Anzahl | Preis |
|---|---|
| 1+ | 36.1 EUR |
| 10+ | 33.46 EUR |
| 25+ | 32.4 EUR |
| 50+ | 31.61 EUR |
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Technische Details IS61LPS51218A-200TQLI ISSI
Description: IC SRAM 9MBIT PARALLEL 100TQFP, DigiKey Programmable: Not Verified, Memory Organization: 512K x 18, Access Time: 3.1 ns, Memory Interface: Parallel, Supplier Device Package: 100-LQFP (14x20), Memory Format: SRAM, Clock Frequency: 200 MHz, Technology: SRAM - Synchronous, SDR, Voltage - Supply: 3.135V ~ 3.465V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 9Mbit, Mounting Type: Surface Mount, Package / Case: 100-LQFP, Packaging: Tray.
Weitere Produktangebote IS61LPS51218A-200TQLI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IS61LPS51218A-200TQLI | ISSI, Integrated Silicon Solution Inc |
 Description: IC SRAM 9MBIT PARALLEL 100TQFPDigiKey Programmable: Not Verified Memory Organization: 512K x 18 Access Time: 3.1 ns Memory Interface: Parallel Supplier Device Package: 100-LQFP (14x20) Memory Format: SRAM Clock Frequency: 200 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 9Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 72 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS61LPS51218A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 72 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS61LPS51218A-200TQLI |
|
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 9MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 512K x 18
Access Time: 3.1 ns
Memory Interface: Parallel
Supplier Device Package: 100-LQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 9Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC SRAM 9MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 512K x 18
Access Time: 3.1 ns
Memory Interface: Parallel
Supplier Device Package: 100-LQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 9Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61LPS51218A-200TQLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen
Stück im Wert von UAH