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IS61LV25616AL-10BLI-TR ISSI


61lv25616al.pdf Hersteller: ISSI
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 48-Pin Mini-BGA T/R
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Technische Details IS61LV25616AL-10BLI-TR ISSI

Description: IC SRAM 4MBIT PARALLEL 48TFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (8x10), Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.

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IS61LV25616AL-10BLI-TR Hersteller : ISSI 61lv25616al.pdf SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 48-Pin Mini-BGA T/R
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IS61LV25616AL-10BLI-TR Hersteller : ISSI IS61LV25616AL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Anzahl je Verpackung: 2500 Stücke
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IS61LV25616AL-10BLI-TR IS61LV25616AL-10BLI-TR Hersteller : ISSI, Integrated Silicon Solution Inc IS61LV25616AL.pdf Description: IC SRAM 4MBIT PARALLEL 48TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (8x10)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IS61LV25616AL-10BLI-TR IS61LV25616AL-10BLI-TR Hersteller : ISSI 61LV25616AL-258498.pdf SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,10ns,3.3v,48 Ball mBGA (8x10 mm), RoHS
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IS61LV25616AL-10BLI-TR Hersteller : ISSI IS61LV25616AL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Produkt ist nicht verfügbar