IS61NLF25636B-7.5TQLI-TR ISSI
Hersteller: ISSICategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Anzahl je Verpackung: 800 Stücke
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Technische Details IS61NLF25636B-7.5TQLI-TR ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel, Operating temperature: -40...85°C, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory organisation: 256kx36bit, Access time: 7.5ns, Kind of package: reel; tape, Kind of interface: parallel, Memory: 9Mb SRAM, Mounting: SMD, Case: QFP100, Operating voltage: 3.3V, Anzahl je Verpackung: 800 Stücke.
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%20Renders/706;-100LQFP-1.6-14x20;-;-100.jpg "IS61NLF25636B-7.5TQLI-TR") |
IS61NLF25636B-7.5TQLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 9MBIT PARALLEL 100LQFP |
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IS61NLF25636B-7.5TQLI-TR | Hersteller : ISSI |
SRAM 8Mb,"No-Wait"/Flow-Through,Sync,256K x 36,7.5ns,3.3v I/O,100 Pin TQFP, RoHS |
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| IS61NLF25636B-7.5TQLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |