
IS61NLP102418B-200B3LI ISSI, Integrated Silicon Solution Inc

Description: IC SRAM 18MBIT PARALLEL 165TFBGA
Packaging: Tray
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-TFBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 29.90 EUR |
10+ | 27.71 EUR |
25+ | 26.83 EUR |
40+ | 26.39 EUR |
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Technische Details IS61NLP102418B-200B3LI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT PARALLEL 165TFBGA, Packaging: Tray, Package / Case: 165-TBGA, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 165-TFBGA (13x15), Part Status: Active, Memory Interface: Parallel, Access Time: 3 ns, Memory Organization: 1M x 18, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61NLP102418B-200B3LI
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IS61NLP102418B-200B3LI | Hersteller : ISSI |
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IS61NLP102418B-200B3LI | Hersteller : ISSI |
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IS61NLP102418B-200B3LI | Hersteller : ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA165 Anzahl je Verpackung: 144 Stücke |
Produkt ist nicht verfügbar |
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IS61NLP102418B-200B3LI | Hersteller : ISSI |
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Produkt ist nicht verfügbar |
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IS61NLP102418B-200B3LI | Hersteller : ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA165 |
Produkt ist nicht verfügbar |