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IS61NLP102418B-200B3LI

IS61NLP102418B-200B3LI ISSI


61nlp_nvp102418b_51236b.pdf Hersteller: ISSI
SRAM Chip Sync Quad 3.3V 18M-bit 1M x 18 3ns 165-Pin TFBGA
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Technische Details IS61NLP102418B-200B3LI ISSI

Description: IC SRAM 18MBIT PARALLEL 165TFBGA, Packaging: Tray, Package / Case: 165-TBGA, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 165-TFBGA (13x15), Part Status: Active, Memory Interface: Parallel, Access Time: 3 ns, Memory Organization: 1M x 18, DigiKey Programmable: Not Verified.

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IS61NLP102418B-200B3LI Hersteller : ISSI IS61NLP102418B-200B3L.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Anzahl je Verpackung: 144 Stücke
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IS61NLP102418B-200B3LI IS61NLP102418B-200B3LI Hersteller : ISSI, Integrated Silicon Solution Inc 61NLP_NVP102418B_51236B.pdf Description: IC SRAM 18MBIT PARALLEL 165TFBGA
Packaging: Tray
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-TFBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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IS61NLP102418B-200B3LI IS61NLP102418B-200B3LI Hersteller : ISSI 61NLP_NVP102418B_51236B-319019.pdf SRAM 18Mb,"No-Wait"/Pipeline,Sync,1Mb x 18,200Mhz,3.3v/2.5v - I/O,165 Ball BGA, RoHS
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IS61NLP102418B-200B3LI Hersteller : ISSI IS61NLP102418B-200B3L.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Produkt ist nicht verfügbar