IS61WV102416EDBLL-10BLI-TR ISSI, Integrated Silicon Solution Inc
Produktrezensionen
Produktbewertung abgeben
Technische Details IS61WV102416EDBLL-10BLI-TR ISSI, Integrated Silicon Solution Inc
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory: 16Mb SRAM, Memory organisation: 1Mx16bit, Operating voltage: 2.4...3.6V, Access time: 10ns, Case: TFBGA48, Kind of interface: parallel, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel; tape.
Weitere Produktangebote IS61WV102416EDBLL-10BLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
|
IS61WV102416EDBLL-10BLI-TR | ISSI |
SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), ECC, RoHS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS61WV102416EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS61WV102416EDBLL-10BLI-TR |
![]() |
Hersteller: ISSI
SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), ECC, RoHS
SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), ECC, RoHS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61WV102416EDBLL-10BLI-TR |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH

