Technische Details IS61WV25616EDALL-20BLI ISSI
Description: IC SRAM 4MBIT PARALLEL 48TFBGA, Packaging: Tray, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2.2V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 20ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61WV25616EDALL-20BLI
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%20Renders/706;48TFBGA-1.2-6x8;;48.jpg "IS61WV25616EDALL-20BLI") |
IS61WV25616EDALL-20BLI | Hersteller : ISSI, Integrated Silicon Solution Inc |
 Description: IC SRAM 4MBIT PARALLEL 48TFBGAPackaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 20ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS61WV25616EDALL-20BLI | Hersteller : ISSI |
SRAM 4Mb,High-Speed/Low Power,Async with ECC, 256K x 16, 20ns, 1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS |
Produkt ist nicht verfügbar |