IS61WV25616EFBLL-10BLI ISSI
Hersteller: ISSI
SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.04 EUR |
| 10+ | 7.52 EUR |
| 25+ | 7.28 EUR |
| 50+ | 7.12 EUR |
| 100+ | 6.95 EUR |
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Technische Details IS61WV25616EFBLL-10BLI ISSI
Description: 4Mb,High-Speed/Low Power,Async w, Packaging: Bulk, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61WV25616EFBLL-10BLI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IS61WV25616EFBLL-10BLI | ISSI, Integrated Silicon Solution Inc |
Description: 4Mb,High-Speed/Low Power,Async w Packaging: Bulk Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 480 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IS61WV25616EFBLL-10BLI | ISSI |
High Speed Asynchronous CMOS Static RAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 480 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS61WV25616EFBLL-10BLI |
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: 4Mb,High-Speed/Low Power,Async w
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: 4Mb,High-Speed/Low Power,Async w
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 480 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61WV25616EFBLL-10BLI |
|
Hersteller: ISSI
High Speed Asynchronous CMOS Static RAM
High Speed Asynchronous CMOS Static RAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 480 Stücke
Im Einkaufswagen
Stück im Wert von UAH