Produkte > ISSI > IS61WV25616EFBLL-10TLI

IS61WV25616EFBLL-10TLI ISSI


61_64WV25616EFALL_BLL-1620710.pdf
Hersteller: ISSI
SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7.35 EUR
10+6.66 EUR
100+5.81 EUR
270+5.78 EUR
540+5.59 EUR
1080+5.32 EUR
2565+5.05 EUR
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Technische Details IS61WV25616EFBLL-10TLI ISSI

Description: 4Mb,High-Speed/Low Power,Async w, Packaging: Bulk, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16.

Weitere Produktangebote IS61WV25616EFBLL-10TLI

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IS61WV25616EFBLL-10TLI ISSI, Integrated Silicon Solution Inc 61-64WV25616EFALL_BLL.pdf Description: 4Mb,High-Speed/Low Power,Async w
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
Produkt ist nicht verfügbar
Mindestbestellmenge: 405 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IS61WV25616EFBLL-10TLI 61-64WV25616EFALL_BLL.pdf
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: 4Mb,High-Speed/Low Power,Async w
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
Produkt ist nicht verfügbar
Mindestbestellmenge: 405 Stücke
Im Einkaufswagen  Stück im Wert von  UAH