IS61WV2568EDBLL-10KLI ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 2MBIT PARALLEL 36SOJ
Memory Organization: 256K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Active
Supplier Device Package: 36-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
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Technische Details IS61WV2568EDBLL-10KLI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 2MBIT PARALLEL 36SOJ, Memory Organization: 256K x 8, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Part Status: Active, Supplier Device Package: 36-SOJ, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.4V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 2Mbit, Mounting Type: Surface Mount, Package / Case: 36-BSOJ (0.400", 10.16mm Width), Packaging: Tube.
Weitere Produktangebote IS61WV2568EDBLL-10KLI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IS61WV2568EDBLL-10KLI | ISSI |
SRAM 2Mb,High-Speed,Async with ECC,256K x 8,10ns,2.4V-3.6V,36 Pin SOJ (400 mil), RoHS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS61WV2568EDBLL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: SOJ36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 10ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS61WV2568EDBLL-10KLI |
|
Hersteller: ISSI
SRAM 2Mb,High-Speed,Async with ECC,256K x 8,10ns,2.4V-3.6V,36 Pin SOJ (400 mil), RoHS
SRAM 2Mb,High-Speed,Async with ECC,256K x 8,10ns,2.4V-3.6V,36 Pin SOJ (400 mil), RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS61WV2568EDBLL-10KLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: SOJ36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: SOJ36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH