IS61WV3216DBLL-10TLI-TR ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
Produktrezensionen
Produktbewertung abgeben
Technische Details IS61WV3216DBLL-10TLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 512KBIT PAR 44TSOP II, Packaging: Tape & Reel (TR), Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 512Kbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 32K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61WV3216DBLL-10TLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IS61WV3216DBLL-10TLI-TR | ISSI |
SRAM 512K,High-Speed/Low Power,Async,32K x 16,12ns,2.4v-3.6v,44 Pin TSOP II, RoHS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS61WV3216DBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS61WV3216DBLL-10TLI-TR |
|
Hersteller: ISSI
SRAM 512K,High-Speed/Low Power,Async,32K x 16,12ns,2.4v-3.6v,44 Pin TSOP II, RoHS
SRAM 512K,High-Speed/Low Power,Async,32K x 16,12ns,2.4v-3.6v,44 Pin TSOP II, RoHS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61WV3216DBLL-10TLI-TR |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH