IS61WV51216BLL-10MLI-TR

IS61WV51216BLL-10MLI-TR ISSI, Integrated Silicon Solution Inc


61-64WV51216.pdf Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 8MBIT PARALLEL 48MINIBGA
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Technische Details IS61WV51216BLL-10MLI-TR ISSI, Integrated Silicon Solution Inc

Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory: 8Mb SRAM, Memory organisation: 512kx16bit, Operating voltage: 2.4...3.6V, Access time: 10ns, Case: TFBGA48, Kind of interface: parallel, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel; tape.

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IS61WV51216BLL-10MLI-TR IS61WV51216BLL-10MLI-TR Hersteller : ISSI 61-64WV51216-258283.pdf SRAM 8Mb,High-Speed,Async,512K x 16,8ns/3.3v,or 10ns/2.4v-3.6v,48 Ball mBGA (9x11 mm), RoHS
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Im Einkaufswagen  Stück im Wert von  UAH
IS61WV51216BLL-10MLI-TR Hersteller : ISSI IS61WV51216BLL-10MLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH