| Anzahl | Preis |
|---|---|
| 1+ | 31.35 EUR |
| 10+ | 29.06 EUR |
| 25+ | 28.14 EUR |
| 50+ | 26.82 EUR |
| 100+ | 26.15 EUR |
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Technische Details IS61WV51216EDBLL-10TLI ISSI
Description: IC SRAM 8MBIT PARALLEL 44TSOP II, Write Cycle Time - Word, Page: 10ns, Supplier Device Package: 44-TSOP II, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.4V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 44-TSOP (0.400", 10.16mm Width), Packaging: Tray, DigiKey Programmable: Not Verified, Memory Organization: 512K x 16, Access Time: 10 ns, Memory Interface: Parallel.
Weitere Produktangebote IS61WV51216EDBLL-10TLI nach Preis ab 15.2 EUR bis 18.41 EUR
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| IS61WV51216EDBLL-10TLI | Hersteller : ISSI, Integrated Silicon Solution Inc |
 Description: IC SRAM 8MBIT PARALLEL 44TSOP IIWrite Cycle Time - Word, Page: 10ns Supplier Device Package: 44-TSOP II Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 512K x 16 Access Time: 10 ns Memory Interface: Parallel |
auf Bestellung 327 Stücke: Lieferzeit 10-14 Tag (e) |
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| IS61WV51216EDBLL-10TLI | Hersteller : ISSI |
Група товару: Мікросхеми пам'яті Од. вим: шт |
Produkt ist nicht verfügbar |