Produkte > ISSI > IS61WV51216EDBLL-8BLI

IS61WV51216EDBLL-8BLI ISSI

Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Anzahl je Verpackung: 480 Stücke

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Technische Details IS61WV51216EDBLL-8BLI ISSI

Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TFBGA48, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory: 8Mb SRAM, Memory organisation: 512kx16bit, Access time: 8ns, Case: TFBGA48, Kind of interface: parallel, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Operating voltage: 2.4...3.6V, Anzahl je Verpackung: 480 Stücke.

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IS61WV51216EDBLL-8BLI	Hersteller : ISSI	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,8ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS	Produkt ist nicht verfügbar
IS61WV51216EDBLL-8BLI	Hersteller : ISSI	Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 8ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V	Produkt ist nicht verfügbar