IS61WV51216EEBLL-10BLI-TR ISSI
Hersteller: ISSICategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IS61WV51216EEBLL-10BLI-TR ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory: 8Mb SRAM, Memory organisation: 512kx16bit, Access time: 10ns, Case: TFBGA48, Kind of interface: parallel, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel; tape, Operating voltage: 2.4...3.6V, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote IS61WV51216EEBLL-10BLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IS61WV51216EEBLL-10BLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 8MBIT PARALLEL 48TFBGA |
Produkt ist nicht verfügbar |
||
 |
IS61WV51216EEBLL-10BLI-TR | Hersteller : ISSI |
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS |
Produkt ist nicht verfügbar |
|
| IS61WV51216EEBLL-10BLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
Produkt ist nicht verfügbar |