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IS62WV51216EALL-55BLI

IS62WV51216EALL-55BLI ISSI


50226920928467562-65wv51216eall-bll.pdf Hersteller: ISSI
SRAM Chip Async Single 1.8V 8M-bit 512K x 16 55ns 48-Pin VFBGA
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Technische Details IS62WV51216EALL-55BLI ISSI

Description: IC SRAM 8MBIT PARALLEL 48VFBGA, Packaging: Tray, Package / Case: 48-VFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2.2V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-VFBGA (6x8), Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.

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IS62WV51216EALL-55BLI IS62WV51216EALL-55BLI Hersteller : ISSI 50226920928467562-65wv51216eall-bll.pdf SRAM Chip Async Single 1.8V 8M-bit 512K x 16 55ns 48-Pin VFBGA
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IS62WV51216EALL-55BLI Hersteller : ISSI IS62WV51216EALL-55BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Anzahl je Verpackung: 312 Stücke
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IS62WV51216EALL-55BLI IS62WV51216EALL-55BLI Hersteller : ISSI, Integrated Silicon Solution Inc 62-65WV51216EALL-BLL.pdf Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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IS62WV51216EALL-55BLI IS62WV51216EALL-55BLI Hersteller : ISSI 62_65WV51216EALL_BLL-462614.pdf SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,55ns,1.65v-2.2v,48 Ball mBGA (6x8 mm), RoHS
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IS62WV51216EALL-55BLI Hersteller : ISSI IS62WV51216EALL-55BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Produkt ist nicht verfügbar