IS64WV12816EDBLL-10CTLA3 ISSI
Hersteller: ISSISRAM 2Mb,High-Speed,Async,128K x 16,8ns/3.3v, or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp, ECC
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.79 EUR |
| 10+ | 9.84 EUR |
| 25+ | 9.64 EUR |
| 50+ | 9.59 EUR |
| 100+ | 8.61 EUR |
| 270+ | 7.94 EUR |
| 1080+ | 7.8 EUR |
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Technische Details IS64WV12816EDBLL-10CTLA3 ISSI
Description: IC SRAM 2MBIT PARALLEL 44TSOP II, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 2Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 128K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS64WV12816EDBLL-10CTLA3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IS64WV12816EDBLL-10CTLA3 | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 2MBIT PARALLEL 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
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