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Technische Details IS64WV25616EDBLL-10CTLA3 ISSI
Description: IC SRAM 4MBIT PARALLEL 44TSOP II, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS64WV25616EDBLL-10CTLA3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IS64WV25616EDBLL-10CTLA3 | Hersteller : ISSI |
 Статична пам'ять SRAM, Uживл, В = 2,4...3,6, Об'єм RAM = 4 Мбіт, Орг. пам. = 256K x 16, Тдост/Частота = 10, Тексп, °C = -40...+125, Тип інтерф. = Паралельний,... Група товару: Інтегральні мікросхеми Корпус: 44-TSOP Од. вим: 3Anzahl je Verpackung: 1 Stücke |
verfügbar 1 Stücke: |
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| IS64WV25616EDBLL-10CTLA3 | Hersteller : ISSI |
SRAM 4Mb (256Kx16) 10ns TSOP II-44 Група товару: Мікросхеми пам'яті Од. вим: шт |
Produkt ist nicht verfügbar |
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IS64WV25616EDBLL-10CTLA3 | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |