IS64WV2568EDBLL-10CTLA3 ISSI
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Technische Details IS64WV2568EDBLL-10CTLA3 ISSI
Description: IC SRAM 2MBIT PARALLEL 44TSOP II, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 2Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS64WV2568EDBLL-10CTLA3
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IS64WV2568EDBLL-10CTLA3 | Hersteller : ISSI, Integrated Silicon Solution Inc |
 Description: IC SRAM 2MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
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IS64WV2568EDBLL-10CTLA3 | Hersteller : ISSI |
SRAM 2Mb,High-Speed,Async,256K x 8, 8ns/3.3v, or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp, ECC |
Produkt ist nicht verfügbar |
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| IS64WV2568EDBLL-10CTLA3 | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TSOP44 II Mounting: SMD Operating temperature: -40...125°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 10ns |
Produkt ist nicht verfügbar |