IS66WVE4M16EALL-70BLI-TR ISSI
Hersteller: ISSI
SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS
SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS
auf Bestellung 1868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.5 EUR |
10+ | 8.68 EUR |
25+ | 8.5 EUR |
50+ | 8.45 EUR |
100+ | 7.59 EUR |
250+ | 7.55 EUR |
500+ | 7.08 EUR |
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Technische Details IS66WVE4M16EALL-70BLI-TR ISSI
Description: IC PSRAM 64MBIT PARALLEL 48TFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: PSRAM (Pseudo SRAM), Memory Format: PSRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 4M x 16.
Weitere Produktangebote IS66WVE4M16EALL-70BLI-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IS66WVE4M16EALL-70BLI-TR | Hersteller : ISSI | PSRAM Async Single Port 64M-bit 4M x 16 70ns 48-Pin TFBGA |
Produkt ist nicht verfügbar |
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IS66WVE4M16EALL-70BLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V Kind of package: reel; tape Access time: 70ns Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IS66WVE4M16EALL-70BLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 64MBIT PARALLEL 48TFBGA Packaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Memory Format: PSRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 4M x 16 |
Produkt ist nicht verfügbar |
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IS66WVE4M16EALL-70BLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V Kind of package: reel; tape Access time: 70ns |
Produkt ist nicht verfügbar |